北京建站工作室,最大的网站建设公司排名,中国建信网官网,南网站建设 首选搜点网络使用STM32的FLASH保存数据
为了防止“掉电丢失数据”#xff0c;我们最先想到的是EEPROM#xff0c;但是若考虑到降低成本和PCB布线的空间#xff0c;使用CPU内部的FLASH空间来保存数据#xff0c;是最好的选择。尤其是在STM32芯片上#xff0c;应用案例还是比较多的。
…使用STM32的FLASH保存数据
为了防止“掉电丢失数据”我们最先想到的是EEPROM但是若考虑到降低成本和PCB布线的空间使用CPU内部的FLASH空间来保存数据是最好的选择。尤其是在STM32芯片上应用案例还是比较多的。
STM32的FLASH是以半字保存数据的因此我们可以将“掉电数据”以双字节为最小存储单位去进行访问。
STM32没有自带 的EEPROM但是它具有 IAP功能因此我们可以把它的 FLASH 当成 EEPROM 来使用。 1、STM32_Internal_FLASH.h文件如下
#ifndef _STM32_Internal_FLASH_H
#define _STM32_Internal_FLASH_H #include stm32f10x.h
#include sys.h #define STM32_FLASH_BASE_ADDRESS ( (uint32_t)0x08000000 )
//STM32 FLASH的编程起始地址
#define STM32_FLASH_SIZE 512
//所选STM32的FLASH容量大小(单位为K) #if STM32_FLASH_SIZE256 //CPU的FLASH空间小于256K字节
#define STM_SECTOR_SIZE 1024 //每个扇区为1024个字节
#define STMFLASH_WriteLength_SIZE 512 //每个扇区为512个半字
#define STM32_FLASH_START_ADDRESS ( (uint32_t)0x0800FC00 )
//数据保存到STM32F103C8T6最后一页,即第64页,号码为63,页大小为1KB
#else
#define STM_SECTOR_SIZE 2048 //每个扇区为2048个字节
#define STMFLASH_WriteLength_SIZE 1024 //每个扇区为1024个半字
#define STM32_FLASH_START_ADDRESS ( (uint32_t)0x0807F800 )
//数据保存到STM32F103ZET6最后一页,即第256页,号码为255,页大小为2KB
#endif union EEPROM_Uint16_Data_TYPE
{ unsigned char b[2]; //b[1]和Data的高8位值相等;b[0]和Data的低8位值相等; uint16_t Data;
}; union EEPROM_U32_Data_TYPE
{ u8 b[4]; //b[3]和Data的高8位值相等;b[0]和Data的低8位值相等; u32 Data;
}; union EEPROM_FLOAT_DATA_TYPE
{ u8 b[4]; //b[3]和float_data的高8位值相等;b[0]和float_data的低8位值相等; float float_data;
}; union EEPROM_DOUBLE_DATA_TYPE
{ u8 b[8]; //b[7]和float_data的高8位值相等;b[0]和float_data的低8位值相等; double float_data;
}; extern void STMFLASH_Read(u32 tReadAddr,u16 *pBuffer,u16 tSize);
extern void IAP_Write_APP_BIN(uint32_t gIAP_FlashAddress,u8 *pBuffer,u16 len); extern void EEPROM_U16_Data_Write(u16 x,uint32_t addr);
extern u16 EEPROM_U16_Data_Read(uint32_t addr);
extern void EEPROM_U32_Data_Write(u32 x,uint32_t addr);
extern u32 EEPROM_U32_Data_Read(uint32_t addr);
extern void EEPROM_Float_Data_Write(float x,uint32_t addr);
extern float EEPROM_Float_Data_Read(uint32_t addr);
extern void EEPROM_Double_Data_Write(double x,uint32_t addr);
extern double EEPROM_Double_Data_Read(uint32_t addr);
extern void CPU_FLASH_Read_Write_Test(void); #endif 2、STM32_Internal_FLASH.c文件如下
#include STM32_Internal_FLASH.h
#include stdio.h void STMFLASH_Read(u32 tReadAddr,u16 *pBuffer,u16 tSize);
void IAP_Write_APP_BIN(uint32_t gIAP_FlashAddress,u8 *pBuffer,u16 len); void EEPROM_U16_Data_Write(u16 x,uint32_t addr);
u16 EEPROM_U16_Data_Read(uint32_t addr);
void EEPROM_U32_Data_Write(u32 x,uint32_t addr);
u32 EEPROM_U32_Data_Read(uint32_t addr);
void EEPROM_Float_Data_Write(float x,uint32_t addr);
float EEPROM_Float_Data_Read(uint32_t addr);
void EEPROM_Double_Data_Write(double x,uint32_t addr);
double EEPROM_Double_Data_Read(uint32_t addr);
void CPU_FLASH_Read_Write_Test(void); //函数功能:从CPU的FLASH地址tReadAddr处读取半字(16位数据)
//tReadAddr:CPU的FLASH地址(此地址必须为2的倍数!!)
//返回值:返回半字(16位数据)
u16 STMFLASH_ReadHalfWord(u32 tReadAddr)
{ return *(vu16*)tReadAddr;
} //从CPU的FLASH地址tReadAddr处读取tSize个半字(16位数据),保存到首地址为pBuffer的缓冲区中
//tReadAddr:起始地址
//pBuffer:数据指针
//tSize:半字(16位)数
void STMFLASH_Read(u32 tReadAddr,u16 *pBuffer,u16 tSize)
{ u16 i; for(i0;itSize;i) { pBuffer[i]STMFLASH_ReadHalfWord(tReadAddr); //从CPU的FLASH地址tReadAddr处读取半字(16位数据) tReadAddrtReadAddr2;//偏移2个字节. }
} //函数功能:将STMFLASH_BUF[]中前STMFLASH_WriteLength个半字,从FLASH起始地址为STMFLASH_WriteAddress开始处写入,在写之前不检查能否写入
//STMFLASH_WriteAddress:CPU的FLASH起始地址
//STMFLASH_BUF:待写数据缓冲区的起始指针
//STMFLASH_WriteLength:需要写入半字(16位)的个数
//STMFLASH_WriteLength;要写入的双字节数,待写数据在STMFLASH_BUF[]中
//STMFLASH_BUF[STMFLASH_WriteLength_SIZE];//最多是2K字节,即1K个双字节
void STMFLASH_Write_NoCheck(u32 STMFLASH_WriteAddress,u16 *STMFLASH_BUF,u16 STMFLASH_WriteLength)
{ u16 k; for(k0;kSTMFLASH_WriteLength;k) //循环写入STMFLASH_WriteLength个半字 { FLASH_ProgramHalfWord(STMFLASH_WriteAddress,STMFLASH_BUF[k]); STMFLASH_WriteAddressSTMFLASH_WriteAddress2; //CPU的FLASH地址增加2,指向下一个地址 }
} const char IAP_FlashAddress1_REG[]\r\nIAP_FlashAddress10x;
const char IAP_FlashAddress2_REG[]\r\nIAP_FlashAddress20x;
//函数功能:将pBuffer[]中前tSize个半字,从FLASH起始地址为tWriteAddr开始处写入,在写之前检查能否写入
//IAP_FlashAddress:起始地址(此地址必须为2的倍数!!)
//pBuffer:数据指针,数据在IAP_Buffer[]中
//tSize:装载烧写数据的数量,单位为半字,和IAP_Buffer_Length一样
void STMFLASH_Write(uint32_t gIAP_FlashAddress,u16 *pBuffer,u16 tSize)
{ u16 t; u16 i; u16 tmp; u8 flag; u16 STMFLASH_BUF[STMFLASH_WriteLength_SIZE]; //最多是2K字节,即1K个双字节 u16 STMFLASH_WriteLength; //要写入的双字节数,待写数据在STMFLASH_BUF[]中 u32 STMFLASH_WriteAddress; //写地址 u16 STMFLASH_BUF_Index; //用来指示STMFLASH_BUF[]中待写数据的下标 u16 STMFLASH_BUF_Load_Length; //用来指示STMFLASH_BUF[]中待装载的数据长度 uint32_t gIAP_FlashSectorNumber; //扇区号从0开始 uint32_t gIAP_FlashOffsetAddress;//其值为(IAP_FlashAddress-0X08000000) (void)flag;
if( gIAP_FlashAddressSTM32_FLASH_BASE_ADDRESS||(gIAP_FlashAddress(STM32_FLASH_BASE_ADDRESS1024*STM32_FLASH_SIZE)) ) return;//非法地址 FLASH_Unlock();//解锁 while(1)//循环写FLASH { gIAP_FlashOffsetAddressgIAP_FlashAddress-STM32_FLASH_BASE_ADDRESS; //计算待写数据在FLASH中的偏移地址 gIAP_FlashSectorNumbergIAP_FlashOffsetAddress/STM_SECTOR_SIZE; //计算待写数据在FLASH中的扇区号码,从0开始 tmpgIAP_FlashOffsetAddress%STM_SECTOR_SIZE; //计算当前扇区已经写了多少个字节 STMFLASH_BUF_Indextmp/2;//计算当前扇区已经写了多少个半字 STMFLASH_BUF_Load_LengthSTMFLASH_WriteLength_SIZE-STMFLASH_BUF_Index;
//计算待写数据的数量 if(tSizeSTMFLASH_BUF_Load_Length) //待写数据的数量没有越过当前扇区的范围 { flag0; STMFLASH_BUF_Load_LengthtSize; } else flag1; gIAP_FlashAddressgIAP_FlashSectorNumber*STM_SECTOR_SIZE;
gIAP_FlashAddressgIAP_FlashAddressSTM32_FLASH_BASE_ADDRESS;
//计算扇区的首地址 STMFLASH_Read(gIAP_FlashAddress,STMFLASH_BUF,STMFLASH_WriteLength_SIZE);//根据扇区首地址,读出整个扇区的内容 for(i0;iSTMFLASH_BUF_Load_Length;i)//检查待写的区域是否需要擦除 { tSTMFLASH_BUF_Indexi;//计算修改数据的下标值 if(STMFLASH_BUF[t]!0XFFFF)break;//需要擦除 } if(iSTMFLASH_BUF_Load_Length)//待写的区域需要擦除 { FLASH_ErasePage(gIAP_FlashAddress);//根据扇区首地址,擦除这个扇区 for(i0;iSTMFLASH_BUF_Load_Length;i)//装载待编程数据 { tSTMFLASH_BUF_Indexi; //得到在STMFLASH_BUF[]中的下标偏移量 STMFLASH_BUF[t]pBuffer[i]; //装载待写数据到STMFLASH_BUF[]中 } STMFLASH_WriteAddressgIAP_FlashAddress; //将扇区首地址作为写起始地址 STMFLASH_WriteLengthSTMFLASH_BUF_IndexSTMFLASH_BUF_Load_Length; //计算“写入半字的数量“ STMFLASH_Write_NoCheck(STMFLASH_WriteAddress,STMFLASH_BUF,STMFLASH_WriteLength);//写入整个扇区 tmpSTMFLASH_WriteLength;tmp(u16)(tmp1);//计算已写字节数量 gIAP_FlashAddressgIAP_FlashAddresstmp;//记录写结束地址 printf(%s,IAP_FlashAddress1_REG); printf(%x,gIAP_FlashAddress); } else//待写的区域不需要擦除 { for(i0;iSTMFLASH_BUF_Load_Length;i)//装载待编程数据 { STMFLASH_BUF[i]pBuffer[i]; } gIAP_FlashAddressgIAP_FlashAddresstmp; //计算写起始地址 STMFLASH_WriteAddressgIAP_FlashAddress; //记录写地址 STMFLASH_WriteLengthSTMFLASH_BUF_Load_Length; //计算“写入半字的数量“ STMFLASH_Write_NoCheck(STMFLASH_WriteAddress,STMFLASH_BUF,STMFLASH_WriteLength);
//写已经擦除了的,直接写入扇区剩余区间 tmpSTMFLASH_WriteLength;tmp(u16)(tmp1);//计算已写字节数量 gIAP_FlashAddressgIAP_FlashAddresstmp;//记录写结束地址 printf(%s,IAP_FlashAddress2_REG); printf(%x,gIAP_FlashAddress); } if(tSizeSTMFLASH_BUF_Load_Length) { break;//写入结束了 } else//写入未结束 { gIAP_FlashSectorNumber;//扇区编号增1 STMFLASH_BUF_Index0;//偏移位置为0 pBufferpBufferSTMFLASH_BUF_Load_Length;
//已经写了STMFLASH_BUF_Load_Length个半字,修改pBuffer指针,指向需要写的数据 tSizetSize-STMFLASH_BUF_Load_Length;//计算剩余的待写数据的个数 if( tSize(STMFLASH_WriteLength_SIZE) )//超过一个扇区 STMFLASH_BUF_Load_LengthSTMFLASH_WriteLength_SIZE; //下一个扇区还是写不完 else//不足一个扇区 { STMFLASH_BUF_Load_LengthtSize;//下一个扇区可以写完了 } } } FLASH_Lock();//上锁
} //gIAP_FlashAddress:烧写数据的起始地址
//pBuffer[]:待烧写数据块的首地址
//len:烧写数据的数量(字节)
void IAP_Write_APP_BIN(uint32_t gIAP_FlashAddress,u8 *pBuffer,u16 len)
{ u16 t; u16 i; u16 tmp1,tmp2; u16 gIAP_Buffer[1024]; u16 gIAP_Buffer_Length; if( gIAP_FlashAddressSTM32_FLASH_BASE_ADDRESS||(gIAP_FlashAddress(STM32_FLASH_BASE_ADDRESS1024*STM32_FLASH_SIZE)) )return;//非法地址 i0; for(t0;tlen;)//若Len2048则循环写入 { tmp1*pBuffer;tmp1(u16)(tmp10x00FF);pBuffer; tmp2*pBuffer;tmp2(u16)(tmp28);tmp2(u16)(tmp20xFF00);pBuffer; tmp2(u16)(tmp2|tmp1);//合成半字(16位),生成待写数据 gIAP_Buffer[i]tmp2;i;//将待写数据保存到IAP_Buffer[]中 if(iSTMFLASH_WriteLength_SIZE)//满1K个半字,则执行写入CPU的FLASH { i0; gIAP_Buffer_LengthSTMFLASH_WriteLength_SIZE; //装载烧写数据的数量,单位为半字 STMFLASH_Write(gIAP_FlashAddress,gIAP_Buffer,gIAP_Buffer_Length); } tt2;//因为读取的是半字,所以要加2 } if(i)//还有i个半字等待写入FLASH { gIAP_Buffer_Lengthi;//装载烧写数据的数量,单位为半字 STMFLASH_Write(gIAP_FlashAddress,gIAP_Buffer,gIAP_Buffer_Length); //将最后的一些内容字节写进去 }
} //函数功能:将u16型数据x保存到CPU的FLASH中,保存数据的地址为addr;
void EEPROM_U16_Data_Write(u16 x,uint32_t addr)
{ union EEPROM_Uint16_Data_TYPE temp; temp.Datax; IAP_Write_APP_BIN(addr,temp.b,2);
} //函数功能:从CPU的FLASH中读取u16型数据
u16 EEPROM_U16_Data_Read(uint32_t addr)
{ u16 rerurn_value; STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 return(rerurn_value);
} //函数功能:将u32型数据x保存到CPU的FLASH中,保存数据的地址为addr;
void EEPROM_U32_Data_Write(u32 x,uint32_t addr)
{ union EEPROM_U32_Data_TYPE temp; temp.Datax; IAP_Write_APP_BIN(addr,temp.b,4);
} //函数功能:从CPU的FLASH中读取u32型数据
u32 EEPROM_U32_Data_Read(uint32_t addr)
{ union EEPROM_U32_Data_TYPE temp; u16 rerurn_value; temp.Data0; STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 temp.b[0](u8)( rerurn_value0x00FF ); temp.b[1](u8)( (u16)(rerurn_value8)0x00FF ); addraddr2;//因为数据是以半字保存的,因此地址addr需要加2 STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 temp.b[2](u8)( rerurn_value0x00FF ); temp.b[3](u8)( (u16)(rerurn_value8)0x00FF ); return(temp.Data);
} //函数功能:将float型数据x保存到CPU的FLASH中,保存数据的地址为addr;
void EEPROM_Float_Data_Write(float x,uint32_t addr)
{ union EEPROM_FLOAT_DATA_TYPE temp; temp.float_datax; IAP_Write_APP_BIN(addr,temp.b,4);
} //函数功能:从CPU的FLASH中读取float型数据
float EEPROM_Float_Data_Read(uint32_t addr)
{ union EEPROM_FLOAT_DATA_TYPE temp; u16 rerurn_value; temp.float_data0; STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 temp.b[0](u8)( rerurn_value0x00FF ); temp.b[1](u8)( (u16)(rerurn_value8)0x00FF ); addraddr2;//因为数据是以半字保存的,因此地址addr需要加2 STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 temp.b[2](u8)( rerurn_value0x00FF ); temp.b[3](u8)( (u16)(rerurn_value8)0x00FF ); return(temp.float_data);
} //函数功能:将double型数据x保存到CPU的FLASH中,保存数据的地址为addr;
void EEPROM_Double_Data_Write(double x,uint32_t addr)
{ union EEPROM_DOUBLE_DATA_TYPE temp; temp.float_datax; IAP_Write_APP_BIN(addr,temp.b,8);
} //函数功能:从CPU的FLASH中读取double型数据
double EEPROM_Double_Data_Read(uint32_t addr)
{ union EEPROM_DOUBLE_DATA_TYPE temp; u16 rerurn_value; temp.float_data0; STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 temp.b[0](u8)( rerurn_value0x00FF ); temp.b[1](u8)( (u16)(rerurn_value8)0x00FF ); addraddr2;//因为数据是以半字保存的,因此地址addr需要加2 STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 temp.b[2](u8)( rerurn_value0x00FF ); temp.b[3](u8)( (u16)(rerurn_value8)0x00FF ); addraddr2;//因为数据是以半字保存的,因此地址addr需要加2 STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 temp.b[4](u8)( rerurn_value0x00FF ); temp.b[5](u8)( (u16)(rerurn_value8)0x00FF ); addraddr2;//因为数据是以半字保存的,因此地址addr需要加2 STMFLASH_Read(addr,rerurn_value,1); //从CPU的FLASH地址addr处读取1个半字(16位数据),保存到首地址为rerurn_value的缓冲区中 //返回数据保存在rerurn_value中 temp.b[6](u8)( rerurn_value0x00FF ); temp.b[7](u8)( (u16)(rerurn_value8)0x00FF ); return(temp.float_data);
} #define STM32_FLASH_U16_DATA_ADDRESS (STM32_FLASH_START_ADDRESS) //占2个字节,如保存0xABCD
#define STM32_FLASH_U32_DATA_ADDRESS (STM32_FLASH_U16_DATA_ADDRESS2) //占4个字节,如保存0x12345678
#define STM32_FLASH_FLOAT_DATA_ADDRESS (STM32_FLASH_U32_DATA_ADDRESS4) //占4个字节,如保存123.456
#define STM32_FLASH_DOUBLE_DATA_ADDRESS (STM32_FLASH_FLOAT_DATA_ADDRESS4) //占8个字节,如保存1234567.89 #define STM32_FLASH_U16_DATA_ADDRESS1 (STM32_FLASH_DOUBLE_DATA_ADDRESS8) //占2个字节,如保存0xDCBA
#define STM32_FLASH_U32_DATA_ADDRESS1 (STM32_FLASH_U16_DATA_ADDRESS12) //占4个字节,如保存0x87654321
#define STM32_FLASH_FLOAT_DATA_ADDRESS1 (STM32_FLASH_U32_DATA_ADDRESS14) //占4个字节,如保存456.123
#define STM32_FLASH_DOUBLE_DATA_ADDRESS1 (STM32_FLASH_FLOAT_DATA_ADDRESS14) //占8个字节,如保存89.1234567
const char Address_REG[]\r\nAddress: ;
const char Data_REG[] Data: ;
/*
Address: 0807F800 Data: ABCD
Address: 0807F812 Data: DCBA
Address: 0807F802 Data: 12345678
Address: 0807F814 Data: 87654321
Address: 0807F806 Data: 123.456001
Address: 0807F818 Data: 456.122986
Address: 0807F80A Data: 1234567.890000
Address: 0807F81C Data: 89.123457
Modify Data Test Address: 0807F800 Data: AAAA
Address: 0807F812 Data: BBBB
Address: 0807F802 Data: CCCCCCCC
Address: 0807F814 Data: DDDDDDDD
Address: 0807F806 Data: 111.222000
Address: 0807F818 Data: 333.444000
Address: 0807F80A Data: 555.666000
Address: 0807F81C Data: 777.888000
*/
void CPU_FLASH_Read_Write_Test(void)
{ u16 u16_Data; u32 u32_Data; float float_Data; double double_Data; EEPROM_U16_Data_Write(0xABCD,STM32_FLASH_U16_DATA_ADDRESS); EEPROM_U16_Data_Write(0xDCBA,STM32_FLASH_U16_DATA_ADDRESS1); EEPROM_U32_Data_Write(0x12345678,STM32_FLASH_U32_DATA_ADDRESS); EEPROM_U32_Data_Write(0x87654321,STM32_FLASH_U32_DATA_ADDRESS1); EEPROM_Float_Data_Write(123.456,STM32_FLASH_FLOAT_DATA_ADDRESS); EEPROM_Float_Data_Write(456.123,STM32_FLASH_FLOAT_DATA_ADDRESS1); EEPROM_Double_Data_Write(1234567.89,STM32_FLASH_DOUBLE_DATA_ADDRESS); EEPROM_Double_Data_Write(89.1234567,STM32_FLASH_DOUBLE_DATA_ADDRESS1); u16_DataEEPROM_U16_Data_Read(STM32_FLASH_U16_DATA_ADDRESS); printf(%s,Address_REG);printf(%08X,STM32_FLASH_U16_DATA_ADDRESS); printf(%s,Data_REG);printf(%02X,u16_Data); u16_DataEEPROM_U16_Data_Read(STM32_FLASH_U16_DATA_ADDRESS1); printf(%s,Address_REG);printf(%08X,STM32_FLASH_U16_DATA_ADDRESS1); printf(%s,Data_REG);printf(%02X,u16_Data); u32_DataEEPROM_U32_Data_Read(STM32_FLASH_U32_DATA_ADDRESS); printf(%s,Address_REG);printf(%08X,STM32_FLASH_U32_DATA_ADDRESS); printf(%s,Data_REG);printf(%04X,u32_Data); u32_DataEEPROM_U32_Data_Read(STM32_FLASH_U32_DATA_ADDRESS1); printf(%s,Address_REG);printf(%08X,STM32_FLASH_U32_DATA_ADDRESS1); printf(%s,Data_REG);printf(%04X,u32_Data); float_DataEEPROM_Float_Data_Read(STM32_FLASH_FLOAT_DATA_ADDRESS); printf(%s,Address_REG);printf(%08X,STM32_FLASH_FLOAT_DATA_ADDRESS); printf(%s,Data_REG);printf(%f,float_Data); float_DataEEPROM_Float_Data_Read(STM32_FLASH_FLOAT_DATA_ADDRESS1); printf(%s,Address_REG);printf(%08X,STM32_FLASH_FLOAT_DATA_ADDRESS1); printf(%s,Data_REG);printf(%f,float_Data); double_DataEEPROM_Double_Data_Read(STM32_FLASH_DOUBLE_DATA_ADDRESS); printf(%s,Address_REG);printf(%08X,STM32_FLASH_DOUBLE_DATA_ADDRESS); printf(%s,Data_REG);printf(%lf,double_Data); double_DataEEPROM_Double_Data_Read(STM32_FLASH_DOUBLE_DATA_ADDRESS1); printf(%s,Address_REG);printf(%08X,STM32_FLASH_DOUBLE_DATA_ADDRESS1); printf(%s,Data_REG);printf(%lf,double_Data); //修改数据测试 printf(\r\nModify Data Test); EEPROM_U16_Data_Write(0xAAAA,STM32_FLASH_U16_DATA_ADDRESS); EEPROM_U16_Data_Write(0xBBBB,STM32_FLASH_U16_DATA_ADDRESS1); EEPROM_U32_Data_Write(0xCCCCCCCC,STM32_FLASH_U32_DATA_ADDRESS); EEPROM_U32_Data_Write(0xDDDDDDDD,STM32_FLASH_U32_DATA_ADDRESS1); EEPROM_Float_Data_Write(111.222,STM32_FLASH_FLOAT_DATA_ADDRESS); EEPROM_Float_Data_Write(333.444,STM32_FLASH_FLOAT_DATA_ADDRESS1); EEPROM_Double_Data_Write(555.666,STM32_FLASH_DOUBLE_DATA_ADDRESS); EEPROM_Double_Data_Write(777.888,STM32_FLASH_DOUBLE_DATA_ADDRESS1); u16_DataEEPROM_U16_Data_Read(STM32_FLASH_U16_DATA_ADDRESS); printf(%s,Address_REG);printf(%08X,STM32_FLASH_U16_DATA_ADDRESS); printf(%s,Data_REG);printf(%02X,u16_Data); u16_DataEEPROM_U16_Data_Read(STM32_FLASH_U16_DATA_ADDRESS1); printf(%s,Address_REG);printf(%08X,STM32_FLASH_U16_DATA_ADDRESS1); printf(%s,Data_REG);printf(%02X,u16_Data); u32_DataEEPROM_U32_Data_Read(STM32_FLASH_U32_DATA_ADDRESS); printf(%s,Address_REG);printf(%08X,STM32_FLASH_U32_DATA_ADDRESS); printf(%s,Data_REG);printf(%04X,u32_Data); u32_DataEEPROM_U32_Data_Read(STM32_FLASH_U32_DATA_ADDRESS1); printf(%s,Address_REG);printf(%08X,STM32_FLASH_U32_DATA_ADDRESS1); printf(%s,Data_REG);printf(%04X,u32_Data); float_DataEEPROM_Float_Data_Read(STM32_FLASH_FLOAT_DATA_ADDRESS); printf(%s,Address_REG);printf(%08X,STM32_FLASH_FLOAT_DATA_ADDRESS); printf(%s,Data_REG);printf(%f,float_Data); float_DataEEPROM_Float_Data_Read(STM32_FLASH_FLOAT_DATA_ADDRESS1); printf(%s,Address_REG);printf(%08X,STM32_FLASH_FLOAT_DATA_ADDRESS1); printf(%s,Data_REG);printf(%f,float_Data); double_DataEEPROM_Double_Data_Read(STM32_FLASH_DOUBLE_DATA_ADDRESS); printf(%s,Address_REG);printf(%08X,STM32_FLASH_DOUBLE_DATA_ADDRESS); printf(%s,Data_REG);printf(%lf,double_Data); double_DataEEPROM_Double_Data_Read(STM32_FLASH_DOUBLE_DATA_ADDRESS1); printf(%s,Address_REG);printf(%08X,STM32_FLASH_DOUBLE_DATA_ADDRESS1); printf(%s,Data_REG);printf(%lf,double_Data);
} #include string.h
//写CPU的最后一个扇区
void Write_CPU_Last_SECTOR (void)
{ u8 buf[STM_SECTOR_SIZE]; memset(buf,0,STM_SECTOR_SIZE); buf[0]0x11; buf[1]0x22; buf[2]0x33; buf[3]0x44; buf[4]0x55; buf[5]0x66; buf[6]0x77; buf[7]0x88; buf[STM_SECTOR_SIZE-9]0x99; buf[STM_SECTOR_SIZE-8]0x88; buf[STM_SECTOR_SIZE-7]0x77; buf[STM_SECTOR_SIZE-6]0x66; buf[STM_SECTOR_SIZE-5]0x55; buf[STM_SECTOR_SIZE-4]0x44; buf[STM_SECTOR_SIZE-3]0x33; buf[STM_SECTOR_SIZE-2]0x22; buf[STM_SECTOR_SIZE-1]0x11; IAP_Write_APP_BIN(STM32_FLASH_START_ADDRESS,buf,STM_SECTOR_SIZE);
}
3、测试结果 编译配置 使用J-Flash烧写程序启动CPU然后再读回程序发现以前保存的数据仍旧存在便于反复烧写方便生产。
